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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

6,164 Views

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10:32 min

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January 09, 2014

DOI:

10.3791/51179-v

DOI:

10.3791/51179-v

•

10:32 min

January 09, 2014

•

8 Views

Stephen R. D. Thomson, Justin K. Perron³, Mark O. Kimball, Sarabjit Mehta, Francis M. Gasparini

¹Department of Physics,The State University of New York at Buffalo, ²Joint Quantum Institute,University of Maryland, ³The National Institute of Standards and Technology, ⁴Cryogenics and Fluids Branch,NASA Goddard Space Flight Center, ⁵HRL Laboratories

Tags

Silicon Direct Wafer Bonding Nanoscale Cavities Confined 4He Lambda Transition Uniform Confinement Thermal Oxide Lithographic Patterning RCA Cleaning High-temperature Annealing Thermal And Hydrodynamic Properties

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