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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
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Ingenieurwesen
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JoVE Journal Ingenieurwesen
Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

DOI:

10:32 min

January 09, 2014

, , , ,

Kapitel

  • 00:05Titel
  • 01:54Bonding Preparation
  • 04:38Wafer Bonding
  • 08:04Results: Analysis of Bonded Wafers
  • 09:59Conclusion

Summary

Automatische Übersetzung

A method for permanently bonding two silicon wafers so as to realize a uniform enclosure is described. This includes wafer preparation, cleaning, RT bonding, and annealing processes. The resulting bonded wafers (cells) have uniformity of enclosure ~1%1,2. The resulting geometry allows for measurements of confined liquids and gasses.

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