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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
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JoVE Journal Engineering
Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

English

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6,201 Views

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10:32 min

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January 09, 2014

DOI:

10.3791/51179-v

DOI:
10.3791/51179-v

•

10:32 min
January 09, 2014

•

1 Views
, , , ,
1Department of Physics,The State University of New York at Buffalo, 2Joint Quantum Institute,University of Maryland, 3The National Institute of Standards and Technology, 4Cryogenics and Fluids Branch,NASA Goddard Space Flight Center, 5HRL Laboratories

Summary

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A method for permanently bonding two silicon wafers so as to realize a uniform enclosure is described. This includes wafer preparation, cleaning, RT bonding, and annealing processes. The resulting bonded wafers (cells) have uniformity of enclosure ~1%1,2. The resulting geometry allows for measurements of confined liquids and gasses.

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Cite this Article

Thomson, S. R. D., Perron, J. K., Kimball, M. O., Mehta, S., Gasparini, F. M. Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding. J. Vis. Exp. (83), e51179, doi:10.3791/51179 (2014).

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