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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
JoVE 杂志
工程学
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JoVE 杂志 工程学
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

DOI:
10.3791/56494-v

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08:50 min

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November 28, 2017

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, , ,
1Graduate Institute of Electronics Engineering,National Taiwan University, 2Research Center for Applied Sciences,Academia Sinica, 3Graduate Institute of Photonics and Optoelectronics,National Taiwan University

Chapters

  • 00:05Title
  • 00:47WS2/MoS2Vertical Heterostructure Growth
  • 03:49Transition Metal Dichalcogenide (TMD) Thin Film Transfer
  • 06:21Results: Growth Mechanisms and Transistor Performance
  • 08:11Conclusion

Summary

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Through the sulfurization of pre-deposited transition metals, large-area and vertical 2D crystal hetero-structures can be fabricated. The film transferring and device fabrication procedures are also demonstrated in this report.

Tags

2D Crystal HeterostructuresVertical 2D MaterialsSulfurizationTransition Metal FilmsDevice FabricationRF SputteringSapphire SubstrateMolybdenum TargetSulfur PowderTube FurnaceArgon GasMolybdenum DisulfideTungsten Target

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