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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
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工程学
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JoVE 杂志 工程学
Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

DOI:
10.3791/53260-v

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09:20 min

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December 07, 2015

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,
1Department of Microelectronics,Delft University of Technology

Chapters

  • 00:05Title
  • 00:46Bottom Metal and Interlayer Dielectric Deposition
  • 03:23Catalyst Deposition and CNT Growth
  • 05:07Topside Metallization
  • 07:17Results: Characterization of Vertically-aligned Carbon Nanotubes
  • 08:41Conclusion

Summary

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A method for the growth of low temperature vertically-aligned carbon nanotubes, and the subsequent fabrication of vertical interconnect electrical test structures using semiconductor fabrication is presented.

Tags

Keywords: Carbon NanotubesVertical InterconnectsLow-temperature GrowthSemiconductor Technology4-point Probe Test StructuresRaman SpectroscopyOhmic ContactResistivity

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