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Fabricage van uniforme nanoschaalholtes via Silicon Direct Wafer Bonding
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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
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Fabricage van uniforme nanoschaalholtes via Silicon Direct Wafer Bonding

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10:32 min

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January 09, 2014

DOI:

10.3791/51179-v

DOI:
10.3791/51179-v

•

10:32 min
January 09, 2014

•

1 Views
, , , ,
1Department of Physics,The State University of New York at Buffalo, 2Joint Quantum Institute,University of Maryland, 3The National Institute of Standards and Technology, 4Cryogenics and Fluids Branch,NASA Goddard Space Flight Center, 5HRL Laboratories

Summary

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Er wordt een methode beschreven voor het permanent verlijmen van twee siliciumwafels om een uniforme behuizing te realiseren. Dit omvat wafervoorbereiding, reiniging, RT-hechting en gloeiprocessen. De resulterende gebonden wafers (cellen) hebben uniformiteit van de behuizing ~1%1,2. De resulterende geometrie maakt metingen van beperkte vloeistoffen en gassen mogelijk.

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Cite this Article

Thomson, S. R. D., Perron, J. K., Kimball, M. O., Mehta, S., Gasparini, F. M. Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding. J. Vis. Exp. (83), e51179, doi:10.3791/51179 (2014).

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