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Epitassia quasi-van der Waals di AlN, assistita dal grafene sul substrato di zaffiro nano-modello per diodi ultravioletti che emettono luce
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June 25, 2020
DOI:
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors,Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering,Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics,Peking University
Summary
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Viene presentato un protocollo per la crescita assistita dal grafene di pellicole AlN di alta qualità su substrato di zaffiro nanomodellato.
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Zhang, X., Chen, Z., Chang, H., Yan, J., Yang, S., Wang, J., Gao, P., Wei, T. Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes. J. Vis. Exp. (160), e60167, doi:10.3791/60167 (2020).
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