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Grafeen-Geassisteerde Quasi-van der Waals Epitaxy van AlN Film op Nano-Patroon Sapphire Substraat voor Ultraviolet Light Emitting Diodes
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June 25, 2020
DOI:
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors,Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering,Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics,Peking University
Summary
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Een protocol voor grafeen-ondersteunde groei van hoogwaardige AlN-films op saffiersubstraat met nanopatroon wordt gepresenteerd.
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Zhang, X., Chen, Z., Chang, H., Yan, J., Yang, S., Wang, J., Gao, P., Wei, T. Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes. J. Vis. Exp. (160), e60167, doi:10.3791/60167 (2020).
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