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Кремний Металл-оксид-полупроводниковых квантовых точек для одного электрона Перекачивание
JoVE Journal
Engineering
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JoVE Journal Engineering
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Кремний Металл-оксид-полупроводниковых квантовых точек для одного электрона Перекачивание

русский

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13,983 Views

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14:58 min

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June 03, 2015

DOI:

10.3791/52852-v

DOI:
10.3791/52852-v

•

14:58 min
June 03, 2015

•

19 Views
, , , , ,
1School of Electrical Engineering & Telecommunications,University of New South Wales, 2QCD Labs, COMP Centre of Excellence, Department of Applied Physics,Aalto University

Summary

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The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

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SiliconMetal-oxide-semiconductorQuantum DotsSingle-electron PumpingQuantum ComputingQuantum MetrologyFabricationCharacterizationCharge Pumping

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Cite this Article

Rossi, A., Tanttu, T., Hudson, F. E., Sun, Y., Möttönen, M., Dzurak, A. S. Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping. J. Vis. Exp. (100), e52852, doi:10.3791/52852 (2015).

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