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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
JoVE 杂志
工程学
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JoVE 杂志 工程学
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

DOI:
10.3791/52852-v

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14:58 min

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June 03, 2015

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, , , , ,
1School of Electrical Engineering & Telecommunications,University of New South Wales, 2QCD Labs, COMP Centre of Excellence, Department of Applied Physics,Aalto University

Chapters

  • 00:05Title
  • 03:11Creation of the Field Oxide Layer, Ohmic Contacts, and the Gate Oxide
  • 07:10Gate Patterning
  • 09:20Device Integrity Tests
  • 10:57Results: Device Integrity Test Results and Millikelvin Measurements
  • 12:13Conclusion

Summary

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The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

Tags

Keywords: SiliconMetal-oxide-semiconductorQuantum DotsSingle-electron PumpingQuantum ComputingQuantum MetrologyFabricationCharacterizationCharge Pumping

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