Dergi
/
Mühendislik
/
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
JoVE Journal
Mühendislik
Bu içeriği görüntülemek için JoVE aboneliği gereklidir.  Oturum açın veya ücretsiz deneme sürümünü başlatın.
JoVE Journal Mühendislik
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

8,916 Views

•

11:33 min

•

January 19, 2018

DOI:

10.3791/56861-v

DOI:
10.3791/56861-v

•

11:33 min
January 19, 2018

•

2 Views
, , , , , , ,
1Fizik Bölümü,Alberta Üniversitesi, 2National Institute for Nanotechnology,National Research Council of Canada, Edmonton, 3Max Planck Institute for the Structure and Dynamics of Matter, 4Max Planck Institute for Solid State Research, 5Fizik ve Astronomi bölümü,University of Manitoba, 6Joint Attosecond Science Laboratory,University of Ottawa

Özet

Automatically generated

We demonstrate an all-electronic method to observe nanosecond-resolved charge dynamics of dopant atoms in silicon with a scanning tunneling microscope.

Explore More Videos

Nanosecond-resolved Scanning Tunneling MicroscopySingle Dopant Charge DynamicsTime-resolved Scanning Tunneling MicroscopySemiconductor DopantsTunneling CurrentUltra-high VacuumCryogenic TemperaturesArbitrary Function GeneratorRadio Frequency SwitchesSilicon WaferSample PreparationTungsten Filament

Read Article

Cite this Article

Rashidi, M., Vine, W., Burgess, J. A., Taucer, M., Achal, R., Pitters, J. L., Loth, S., Wolkow, R. A. All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics. J. Vis. Exp. (131), e56861, doi:10.3791/56861 (2018).

Download .ris file

Copy

Share Video

.

Copy