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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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JoVE Journal 工学
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

DOI:
10.3791/56861-v

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11:33 min

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January 19, 2018

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, , , , , , ,
1物理学科,University of Alberta, 2National Institute for Nanotechnology,National Research Council of Canada, Edmonton, 3Max Planck Institute for the Structure and Dynamics of Matter, 4Max Planck Institute for Solid State Research, 5物理・天文学科,University of Manitoba, 6Joint Attosecond Science Laboratory,University of Ottawa

章

  • 00:05標題
  • 00:52Initial Setup of Microscope and Experiments
  • 02:05Preparation of the H-Si(100)-(2×1) Reconstruction
  • 04:20Assessing the Quality of the Pump-probe Pulses at the Tunnel Junction
  • 06:32Experiment 1: Time-resolved Scanning Tunneling Spectroscopy
  • 07:55Experiment 2: Time-resolved STM Measurements of Relaxation Dynamics
  • 08:47Experiment 3: Time-resolved STM Measurements of Excitation Dynamics
  • 09:27Results: Investigation of Single Dopant Change Dynamics
  • 10:43Conclusion

概要

自動翻訳

自動翻訳

We demonstrate an all-electronic method to observe nanosecond-resolved charge dynamics of dopant atoms in silicon with a scanning tunneling microscope.

タグ

Nanosecond-resolved Scanning Tunneling MicroscopySingle Dopant Charge DynamicsTime-resolved Scanning Tunneling MicroscopySemiconductor DopantsTunneling CurrentUltra-high VacuumCryogenic TemperaturesArbitrary Function GeneratorRadio Frequency SwitchesSilicon WaferSample PreparationTungsten Filament

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