All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Mohammad Rashidi; Wyatt Vine; Jacob A.J. Burgess; Marco Taucer; Roshan Achal; Jason L. Pitters; Sebastian Loth; Robert A. Wolkow

doi:10.3791/56861

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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工学

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JoVE Journal 工学

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

8,926 Views

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11:33 min

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January 19, 2018

DOI:

10.3791/56861-v

DOI:

10.3791/56861-v

•

11:33 min

January 19, 2018

•

2 Views

Mohammad Rashidi^1,2, Wyatt Vine¹, Jacob A.J. Burgess^3,4,5, Marco Taucer^1,2,6, Roshan Achal¹, Jason L. Pitters², Sebastian Loth^3,4, Robert A. Wolkow^1,2

¹物理学科,University of Alberta, ²National Institute for Nanotechnology,National Research Council of Canada, Edmonton, ³Max Planck Institute for the Structure and Dynamics of Matter, ⁴Max Planck Institute for Solid State Research, ⁵物理・天文学科,University of Manitoba, ⁶Joint Attosecond Science Laboratory,University of Ottawa

概要

We demonstrate an all-electronic method to observe nanosecond-resolved charge dynamics of dopant atoms in silicon with a scanning tunneling microscope.

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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