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利用同步辐射微断层调查的多尺度三维微电子封装
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Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages
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利用同步辐射微断层调查的多尺度三维微电子封装

DOI:
10.3791/53683-v

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08:46 min

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April 13, 2016

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, , , , , ,
1Materials Engineering Division,Lawrence Livermore National Laboratory, 2Assembly Test and Technology Development Failure Analysis Labs,Intel Corporation, 3Advanced Light Source,Lawrence Berkeley National Laboratory

Capítulos

  • 00:05Título
  • 01:28Steps for Performing Tomography Scans at Beamline 8.3.2 (ALS, LBNL)
  • 04:02Setting up the Scan Parameters Using the Data Acquisition Computer
  • 04:54Results: Multi-scale Features Imaged in an Entire Micro-electronic Package Using Synchrotron Radiation Microtomography
  • 06:11Conclusion

Summary

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Tadução automática

在这项研究中同步加速器辐射微断层摄影术中，非破坏性的三维成像技术中，用于研究整个微电子封装为16×16毫米的截面积。由于同步的高通量和亮度样品成像，在短短3分钟，8.7微米的空间分辨率。

Tags

Synchrotron Radiation Microtomography3D ImagingMicroelectronic PackageNon-destructive EvaluationMicrometer ScaleSample MountingSample AlignmentMagnification SelectionX-ray EnergyPolychromatic Beam

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