Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Ori Hazut; Arunava Agarwala; Thangavel Subramani; Sharon Waichman; Roie Yerushalmi

doi:10.3791/50770

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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

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Engenharia

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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

7,150 Views

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09:45 min

•

December 02, 2013

DOI:

10.3791/50770-v

DOI:

10.3791/50770-v

•

09:45 min

December 02, 2013

•

2 Views

Ori Hazut^1,2, Arunava Agarwala^1,2, Thangavel Subramani^1,2, Sharon Waichman^1,2, Roie Yerushalmi^1,2

¹Institute of Chemistry,The Hebrew University of Jerusalem, ²Center for Nanoscience and Nanotechnology,The Hebrew University of Jerusalem

Summary

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Summary

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