Rivista
/
Ingegneria
/
Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
JoVE Journal
Ingegneria
È necessario avere un abbonamento a JoVE per visualizzare questo.  Accedi o inizia la tua prova gratuita.
JoVE Journal Ingegneria
Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Please note that all translations are automatically generated. Click here for the English version.

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

7,154 Views

•

09:45 min

•

December 02, 2013

DOI:

10.3791/50770-v

DOI:
10.3791/50770-v

•

09:45 min
December 02, 2013

•

2 Views
, , , ,
1Institute of Chemistry,The Hebrew University of Jerusalem, 2Center for Nanoscience and Nanotechnology,The Hebrew University of Jerusalem

Summary

Automatically generated

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

Explore More Videos

Monolayer Contact DopingSilicon SurfacesSilicon NanowiresOrganophosphorus CompoundsUltra-shallow Doping ProfilesTetraethyl MethylenediphosphonateVapor-liquid-solid (VLS) MechanismNanowire Field-effect Transistor (NW-FET)

Read Article

Cite this Article

Hazut, O., Agarwala, A., Subramani, T., Waichman, S., Yerushalmi, R. Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds. J. Vis. Exp. (82), e50770, doi:10.3791/50770 (2013).

Download .ris file

Copy

Share Video

.

Copy