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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

7,150 Views

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09:45 min

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December 02, 2013

DOI:

10.3791/50770-v

DOI:
10.3791/50770-v

•

09:45 min
December 02, 2013

•

2 Views
, , , ,
1Institute of Chemistry,The Hebrew University of Jerusalem, 2Center for Nanoscience and Nanotechnology,The Hebrew University of Jerusalem

Summary

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A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

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Hazut, O., Agarwala, A., Subramani, T., Waichman, S., Yerushalmi, R. Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds. J. Vis. Exp. (82), e50770, doi:10.3791/50770 (2013).

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