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Capítulos
- 00:04Título
- 00:38Silicon Wafer Cleaning and Phosphorus Diffusion into the Silicon Substrate
- 03:08SiNx Coating by Plasma-Enhanced Chemical Vapor Deposition (PECVD), GaP Growth by Molecular Beam Epitaxy (MBE), and Wet Etching of Back n+ and SiNx Layers
- 06:01Hole-Selective Contact Formation on the Bare Si Side and External Contact Formation on the GaP Side
- 08:17Results: Characterization of the GaP/Si Heterojunction Devices
- 10:11Conclusion
