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Developing High Performance GaP/Si Heterojunction Solar Cells
JoVE Revista
Ingeniería
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JoVE Revista Ingeniería
Developing High Performance GaP/Si Heterojunction Solar Cells
DOI:

10:31 min

November 16, 2018

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Capítulos

  • 00:04Título
  • 00:38Silicon Wafer Cleaning and Phosphorus Diffusion into the Silicon Substrate
  • 03:08SiNx Coating by Plasma-Enhanced Chemical Vapor Deposition (PECVD), GaP Growth by Molecular Beam Epitaxy (MBE), and Wet Etching of Back n+ and SiNx Layers
  • 06:01Hole-Selective Contact Formation on the Bare Si Side and External Contact Formation on the GaP Side
  • 08:17Results: Characterization of the GaP/Si Heterojunction Devices
  • 10:11Conclusion

Summary

Traducción Automática

Here, we present a protocol to develop high-performance GaP/Si heterojunction solar cells with a high Si minority-carrier lifetime.

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