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Bassa pressione processo di soluzione Vapor-assistita per sintonizzabile Band Gap Pinhole Metilammonio piombo ad alogenuri Perovskite film
 
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Bassa pressione processo di soluzione Vapor-assistita per sintonizzabile Band Gap Pinhole Metilammonio piombo ad alogenuri Perovskite film

Article DOI: 10.3791/55404-v • 08:12 min • September 8th, 2017
September 8th, 2017 •
*1,2,3, *1,4, 1,5,6, 1,7, 8,9, 2,3, 1, 1
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences, University of California, Berkeley, 3Materials Science Division, Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology, University of Trieste, 6TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, 7Department of Chemistry, University of California, Berkeley, 8Materials Science and Engineering, University of California, Berkeley, 9Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory
* These authors contributed equally

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Qui, presentiamo un protocollo per la sintesi di CH3NH3io e CH3NH3Br precursori e la successiva formazione di continuo, privo di foro stenopeico, CH3NH3PbI3-xBrx film sottili per la applicazione in celle solari ad alta efficienza e altri dispositivi optoelettronici.

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Chimica problema 127 condurre ad alogenuri Perovskite processo di soluzione assistita da vapore a bassa pressione Film sottile celle solari ad alogenuri Metilammonio sintesi Gap di banda sintonizzabile
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