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الاتصال أحادي الطبقة المنشطات من السيليكون السطوح والأسلاك المتناهية الصغر عن طريق المركبات الفوسفورية العضوية
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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Please note that all translations are automatically generated. Click here for the English version.

الاتصال أحادي الطبقة المنشطات من السيليكون السطوح والأسلاك المتناهية الصغر عن طريق المركبات الفوسفورية العضوية

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09:45 min

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December 02, 2013

DOI:

10.3791/50770-v

DOI:
10.3791/50770-v

•

09:45 min
December 02, 2013

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2 Views
, , , ,
1Institute of Chemistry,The Hebrew University of Jerusalem, 2Center for Nanoscience and Nanotechnology,The Hebrew University of Jerusalem

Summary

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A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

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Hazut, O., Agarwala, A., Subramani, T., Waichman, S., Yerushalmi, R. Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds. J. Vis. Exp. (82), e50770, doi:10.3791/50770 (2013).

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