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厚度均匀葛电沉积<sub> 23</sub>锑<sub> 7</sub>取值<sub> 70</sub>和As<sub> 40</sub>取值<sub> 60</sub>硫系玻璃薄膜
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厚度均匀葛电沉积<sub> 23</sub>锑<sub> 7</sub>取值<sub> 70</sub>和As<sub> 40</sub>取值<sub> 60</sub>硫系玻璃薄膜
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August 19, 2016
DOI:
1Department of Materials Science and Engineering,Clemson University, 2Department of Materials Science and Engineering,Texas A&M University, 3Department of Electrical and Computer Engineering,Texas A&M University, 4College of Optics and Photonics, Center for Research and Education in Optics and Lasers (CREOL),University of Central Florida, 5Department of Materials Science and Engineering,Massachusetts Institute of Technology, 6Department of Mechanical Engineering,Virginia Polytechnic Institute, 7Microphotonics Center,Massachusetts Institute of Technology
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Novak, S., Lin, P., Li, C., Borodinov, N., Han, Z., Monmeyran, C., Patel, N., Du, Q., Malinowski, M., Fathpour, S., Lumdee, C., Xu, C., Kik, P. G., Deng, W., Hu, J., Agarwal, A., Luzinov, I., Richardson, K. Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films. J. Vis. Exp. (114), e54379, doi:10.3791/54379 (2016).
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