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Umfassende Charakterisierung von ausgedehnten Defekten in Halbleitermaterialien durch ein Rasterelektronenmikroskop
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Umfassende Charakterisierung von ausgedehnten Defekten in Halbleitermaterialien durch ein Rasterelektronenmikroskop
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May 28, 2016
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The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.
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Hieckmann, E., Nacke, M., Allardt, M., Bodrov, Y., Chekhonin, P., Skrotzki, W., Weber, J. Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope. J. Vis. Exp. (111), e53872, doi:10.3791/53872 (2016).
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