This content is Free Access.
Umfassende Charakterisierung von ausgedehnten Defekten in Halbleitermaterialien durch ein Rasterelektronenmikroskop
13,167 Views
•
11:14 min
•
May 28, 2016
DOI:
Summary
Automatically generated
The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.
Read Article
Cite this Article
Hieckmann, E., Nacke, M., Allardt, M., Bodrov, Y., Chekhonin, P., Skrotzki, W., Weber, J. Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope. J. Vis. Exp. (111), e53872, doi:10.3791/53872 (2016).
Copy