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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
 

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Article DOI: 10.3791/53200-v • 08:12 min • December 5th, 2015
December 5th, 2015 •
1, 2, 2, 2
1Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, 2Department of Electronic Engineering, National Taiwan University of Science and Technology

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We describe the approaches for the device fabrication and electrical characterization of molybdenum diselenide (MoSe2) layer semiconductor nanostructures with different thicknesses. In addition, the fabrication of ohmic contacts for MoSe2-layer nanocrystals by the focused-ion beam deposition method using platinum (Pt) as a contact metal is described.

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Ohmic Contact Fabrication Focused-ion Beam Technique Electrical Characterization Layer Semiconductor Nanostructures 2D Structures Bandgap Transitions Transistor Performance Ultrathin And Flexible Devices Luminescence Quantum Efficiency Molybdenum Diselenide (MoSe2) Contact Metal (Platinum) Mechanical Exfoliation Current-voltage Curve Measurements Transmission Electron Microscopy Selected-area Electron Diffractometry Energy-dispersive X-ray Spectroscopy
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