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Ohmsk Kontakt Fabrication Ved hjelp av en Focused-ion Beam Teknikk og elektrisk karakterisering for Layer Semiconductor nanostrukturer
JoVE 杂志
工程学
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JoVE 杂志 工程学
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmsk Kontakt Fabrication Ved hjelp av en Focused-ion Beam Teknikk og elektrisk karakterisering for Layer Semiconductor nanostrukturer

DOI:

08:12 min

December 05, 2015

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Chapters

  • 00:05Title
  • 00:57Exfoliation of MoSe2 Layer Nanocrystals
  • 02:01Dispersion of the Layer Nanocrystals onto the Device Template
  • 02:42Electrode Fabrication by Focused-ion Beam
  • 06:14Results: Characteristics of Ohmic Contacts
  • 07:33Conclusion

Summary

自动翻译

We describe the approaches for the device fabrication and electrical characterization of molybdenum diselenide (MoSe2) layer semiconductor nanostructures with different thicknesses. In addition, the fabrication of ohmic contacts for MoSe2-layer nanocrystals by the focused-ion beam deposition method using platinum (Pt) as a contact metal is described.

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