Journal
/
工程学
/
유기 화합물을 사용하여 실리콘 표면과 나노 와이어의 단층 연락 도핑
JoVE 杂志
工程学
需要订阅 JoVE 才能查看此.  登录或开始免费试用。
JoVE 杂志 工程学
Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Please note that all translations are automatically generated. Click here for the English version.

유기 화합물을 사용하여 실리콘 표면과 나노 와이어의 단층 연락 도핑

7,150 Views

•

09:45 min

•

December 02, 2013

DOI:

10.3791/50770-v

DOI:
10.3791/50770-v

•

09:45 min
December 02, 2013

•

2 Views
, , , ,
1Institute of Chemistry,The Hebrew University of Jerusalem, 2Center for Nanoscience and Nanotechnology,The Hebrew University of Jerusalem

Summary

Automatically generated

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

Explore More Videos

Monolayer Contact DopingSilicon SurfacesSilicon NanowiresOrganophosphorus CompoundsUltra-shallow Doping ProfilesTetraethyl MethylenediphosphonateVapor-liquid-solid (VLS) MechanismNanowire Field-effect Transistor (NW-FET)

Read Article

Cite this Article

Hazut, O., Agarwala, A., Subramani, T., Waichman, S., Yerushalmi, R. Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds. J. Vis. Exp. (82), e50770, doi:10.3791/50770 (2013).

Download .ris file

Copy

Share Video

.

Copy