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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

DOI:
10.3791/61026-v

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09:49 min

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May 13, 2020

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, ,
1Functional Materials and Microsystems Research Group and the Micro Nano Research Facility,RMIT University, 2RMIT Microscopy and Microanalysis Facility,RMIT University

Capítulos

  • 00:04Introduction
  • 00:52Fabrication Process and Electrical Characterization
  • 02:33Biasing Chip Mounting on Gridbar
  • 03:14Lamella Preparation and Biasing Chip Mounting
  • 06:50In Situ Transmission Electron Microscopy (TEM)
  • 07:42Results: Representative In Situ Electrical TEM
  • 09:04Conclusion

Summary

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Presented here is a protocol for analyzing nanostructural changes during in situ biasing with transmission electron microscopy (TEM) for a stacked metal-insulator-metal structure. It has significant applications in resistive switching crossbars for the next generation of programmable logic circuits and neuromimicking hardware, to reveal their underlying operation mechanisms and practical applicability.

Tags

In-situ Transmission Electron MicroscopyBiasingCrossbar DevicesAmorphous Vanadium OxideNano-structural ChangesMetal-insulator-metal DevicePhotolithographyPhysical Vapor DepositionLift-offBiasing ChipGridbar

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