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Ohmse Contact Fabrication Met behulp van een Focused-Ion Beam Techniek en elektrische karakterisatie voor Layer halfgeleider nanostructuren
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmse Contact Fabrication Met behulp van een Focused-Ion Beam Techniek en elektrische karakterisatie voor Layer halfgeleider nanostructuren

12,028 Views

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08:12 min

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December 05, 2015

DOI:

10.3791/53200-v

DOI:
10.3791/53200-v

•

08:12 min
December 05, 2015

•

7 Views
, , ,
1Graduate Institute of Applied Science and Technology,National Taiwan University of Science and Technology, 2Department of Electronic Engineering,National Taiwan University of Science and Technology

Tags

Ohmic ContactFocused-ion BeamLayer SemiconductorMoSe2Electrical CharacterizationThickness-dependent ConductivitySurface-dominant TransportTwo-dimensional Materials

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Chen, R., Tang, C., Shen, W., Huang, Y. Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures. J. Vis. Exp. (106), e53200, doi:10.3791/53200 (2015).

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