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๋ฐ•๋ง‰ ํŠธ๋žœ์ง€์Šคํ„ฐ์˜ ์•Œ๋ฃจ๋ฏธ๋Š„ ์‚ฐํ™”๋ฌผ ์œ ์ „์ฒด ์ธต์— ๋Œ€ํ•œ ์–‘๊ทน ์‚ฐํ™” ๋งค๊ฐœ๋ณ€์ˆ˜์˜ ์˜ํ–ฅ
JoVE ์‹ ๋ฌธ
ํ™”ํ•™
Author Produced
JoVE ๋น„๋””์˜ค๋ฅผ ํ™œ์šฉํ•˜์‹œ๋ ค๋ฉด ๋„์„œ๊ด€์„ ํ†ตํ•œ ๊ธฐ๊ด€ ๊ตฌ๋…์ด ํ•„์š”ํ•ฉ๋‹ˆ๋‹ค.  ์ „์ฒด ๋น„๋””์˜ค๋ฅผ ๋ณด์‹œ๋ ค๋ฉด ๋กœ๊ทธ์ธํ•˜๊ฑฐ๋‚˜ ๋ฌด๋ฃŒ ํŠธ๋ผ์ด์–ผ์„ ์‹œ์ž‘ํ•˜์„ธ์š”.
JoVE ์‹ ๋ฌธ ํ™”ํ•™
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Please note that all translations are automatically generated. Click here for the English version.

๋ฐ•๋ง‰ ํŠธ๋žœ์ง€์Šคํ„ฐ์˜ ์•Œ๋ฃจ๋ฏธ๋Š„ ์‚ฐํ™”๋ฌผ ์œ ์ „์ฒด ์ธต์— ๋Œ€ํ•œ ์–‘๊ทน ์‚ฐํ™” ๋งค๊ฐœ๋ณ€์ˆ˜์˜ ์˜ํ–ฅ

DOI:
10.3791/60798-v

โ€ข

12:32 min

โ€ข

May 24, 2020

โ€ข

, , , ,
1School of Technology and Sciences,Sรฃo Paulo State University – UNESP, 2Scholl of Electronic Engineering,Bangor University, 3Institute of Geosciences and Exact Sciences,Sรฃo Paulo State University – UNESP

Chapters

  • 00:00Introduction
  • 02:48Preparation of the Electrolytic Solution
  • 03:55Substrate Cleaning
  • 05:24Al Gate Electrode Evaporation
  • 06:31Anodization of the Al Layer
  • 07:41ZnO Active Layer Deposition
  • 08:38Drain and Source Electrodes Deposition
  • 09:36TFT Electrical Characterization
  • 10:09Results
  • 11:22Conclusion

Summary

์ž๋™ ๋ฒˆ์—ญ

์ž๋™ ๋ฒˆ์—ญ

์•„์—ฐ ์‚ฐํ™”๋ฌผ ๋ฐ•๋ง‰ ํŠธ๋žœ์ง€์Šคํ„ฐ (TIT)์˜ ์•Œ๋ฃจ๋ฏธ๋Š„ ์‚ฐํ™”๋ฌผ ์œ ์ „์ฒด ์ธต์˜ ์„ฑ์žฅ์„์œ„ํ•œ ์–‘๊ทน ์‚ฐํ™” ๋งค๊ฐœ๋ณ€์ˆ˜๋Š” ์ „๊ธฐ ์  ๋งค๊ฐœ ๋ณ€์ˆ˜ ์‘๋‹ต์— ๋ฏธ์น˜๋Š” ์˜ํ–ฅ์„ ๊ฒฐ์ •ํ•˜๊ธฐ ์œ„ํ•ด ๋‹ค์–‘ํ•ฉ๋‹ˆ๋‹ค. ๋ถ„์‚ฐ ๋ถ„์„(ANOVA)์€ Plackett-Burman ์‹คํ—˜ ์„ค๊ณ„(DOE)์— ์ ์šฉ๋˜์–ด ์ตœ์ ํ™”๋œ ์žฅ์น˜ ์„ฑ๋Šฅ์„ ์ดˆ๋ž˜ํ•˜๋Š” ์ œ์กฐ ์กฐ๊ฑด์„ ๊ฒฐ์ •ํ•ฉ๋‹ˆ๋‹ค.

Tags

Aluminum OxideAnodizationThin-film TransistorsDielectric LayerElectrolytic SolutionSubstrate CleaningAluminum Electrode DepositionAnodization ProcessElectrical CharacterizationPlackett-Burman Design Of Experiments

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