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硫化过渡金属膜制备大面积垂直2D 晶体杂化结构
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JoVE Journal 工学
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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硫化过渡金属膜制备大面积垂直2D 晶体杂化结构

9,036 Views

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08:50 min

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November 28, 2017

DOI:

10.3791/56494-v

DOI:
10.3791/56494-v

•

08:50 min
November 28, 2017

•

5 Views
, , ,
1Graduate Institute of Electronics Engineering,National Taiwan University, 2Research Center for Applied Sciences,Academia Sinica, 3Graduate Institute of Photonics and Optoelectronics,National Taiwan University

概要

Automatically generated

通过 pre-deposited 过渡金属的硫化, 可以制备大面积和垂直2D 晶体杂化结构。本报告还演示了薄膜传输和器件制作程序。

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Cite this Article

Wu, C., Chu, T., Chen, K., Lin, S. Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication. J. Vis. Exp. (129), e56494, doi:10.3791/56494 (2017).

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