ジャーナル
/
工学
/
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
JoVE Journal
工学
このコンテンツを視聴するには、JoVE 購読が必要です。  サインイン又は無料トライアルを申し込む。
JoVE Journal 工学
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

8,376 Views

•

10:31 min

•

November 24, 2016

DOI:

10.3791/54775-v

DOI:
10.3791/54775-v

•

10:31 min
November 24, 2016

•

1 Views
, , , , ,
1NRC Postdoctoral Scholar,Naval Research Laboratory, 2Electronics Science and Technology Division,Naval Research Laboratory

概要

Automatically generated

Molecular beam epitaxy is used to grow N-polar InAlN-barrier high-electron-mobility transistors (HEMTs). Control of the wafer preparation, layer growth conditions and epitaxial structure results in smooth, compositionally homogeneous InAlN layers and HEMTs with mobility as high as 1,750 cm2/V∙sec.

Explore More Videos

Plasma-assisted Molecular Beam EpitaxyN-polar InAlN-barrier High-electron-mobility TransistorsSemiconductor MaterialsWide Bandgap TransistorsGallium Nitride SubstrateOutgassingSubstrate Transfer

Read Article

Cite this Article

Hardy, M. T., Storm, D. F., Katzer, D. S., Downey, B. P., Nepal, N., Meyer, D. J. Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors. J. Vis. Exp. (117), e54775, doi:10.3791/54775 (2016).

Download .ris file

Copy

Share Video

.

Copy