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章
- 00:05標題
- 01:13Preparation of a Block for Sectioning: Self-assembled Monolayers
- 04:12Sectioning to Produce Nanogap Structures
- 05:35Preparation for Electrical Measurements of Self-assembled Monolayer Samples
- 06:00Results: Images and Electrical Measurements for Nanogaps below 5 nm
- 07:15Conclusion
The fabrication of electrically addressable, high-aspect-ratio (> 1000:1) metal nanowires separated by gaps of single nanometers using either sacrificial layers of aluminum and silver or self-assembled monolayers as templates is described. These nanogap structures are fabricated without a clean room or any photo- or electron-beam lithographic processes by a form of edge lithography known as nanoskiving.
