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Токопроводящее Изготовление, используя технику сфокусированного ионного пучка и характеристик для Электрические слоя полупроводниковых наноструктур
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Токопроводящее Изготовление, используя технику сфокусированного ионного пучка и характеристик для Электрические слоя полупроводниковых наноструктур

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08:12 min

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December 05, 2015

DOI:

10.3791/53200-v

DOI:
10.3791/53200-v

•

08:12 min
December 05, 2015

•

8 Views
, , ,
1Graduate Institute of Applied Science and Technology,National Taiwan University of Science and Technology, 2Department of Electronic Engineering,National Taiwan University of Science and Technology

Summary

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We describe the approaches for the device fabrication and electrical characterization of molybdenum diselenide (MoSe2) layer semiconductor nanostructures with different thicknesses. In addition, the fabrication of ohmic contacts for MoSe2-layer nanocrystals by the focused-ion beam deposition method using platinum (Pt) as a contact metal is described.

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Ohmic ContactFocused-ion BeamLayer SemiconductorMoSe2Electrical CharacterizationThickness-dependent ConductivitySurface-dominant TransportTwo-dimensional Materials

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Cite this Article

Chen, R., Tang, C., Shen, W., Huang, Y. Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures. J. Vis. Exp. (106), e53200, doi:10.3791/53200 (2015).

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