Journal
/
Ingénierie
/
오믹 접촉 제조 집중 이온 빔 기술 및 전기 특성 계층 반도체 나노 구조를 위해 사용
Journal JoVE
Ingénierie
Un abonnement à JoVE est nécessaire pour voir ce contenu.  Connectez-vous ou commencez votre essai gratuit.
Journal JoVE Ingénierie
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Please note that all translations are automatically generated. Click here for the English version.

오믹 접촉 제조 집중 이온 빔 기술 및 전기 특성 계층 반도체 나노 구조를 위해 사용

12,050 Views

•

08:12 min

•

December 05, 2015

DOI:

10.3791/53200-v

DOI:
10.3791/53200-v

•

08:12 min
December 05, 2015

•

8 Views
, , ,
1Graduate Institute of Applied Science and Technology,National Taiwan University of Science and Technology, 2Department of Electronic Engineering,National Taiwan University of Science and Technology

Summary

Automatically generated

We describe the approaches for the device fabrication and electrical characterization of molybdenum diselenide (MoSe2) layer semiconductor nanostructures with different thicknesses. In addition, the fabrication of ohmic contacts for MoSe2-layer nanocrystals by the focused-ion beam deposition method using platinum (Pt) as a contact metal is described.

Explore More Videos

Ohmic ContactFocused-ion BeamLayer SemiconductorMoSe2Electrical CharacterizationThickness-dependent ConductivitySurface-dominant TransportTwo-dimensional Materials

Read Article

Cite this Article

Chen, R., Tang, C., Shen, W., Huang, Y. Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures. J. Vis. Exp. (106), e53200, doi:10.3791/53200 (2015).

Download .ris file

Copy

Share Video

.

Copy