Journal
/
Quimica
/
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
JoVE Revista
Quimica
Author Produced
Se requiere una suscripción a JoVE para ver este contenido.  Inicie sesión o comience su prueba gratuita.
JoVE Revista Quimica
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

8,563 Views

•

12:32 min

•

May 24, 2020

DOI:

10.3791/60798-v

DOI:
10.3791/60798-v

•

12:32 min
May 24, 2020

•

9 Views
, , , ,
1School of Technology and Sciences,São Paulo State University – UNESP, 2Scholl of Electronic Engineering,Bangor University, 3Institute of Geosciences and Exact Sciences,São Paulo State University – UNESP

Explore More Videos

Aluminum OxideAnodizationThin-film TransistorsDielectric LayerElectrolytic SolutionSubstrate CleaningAluminum Electrode DepositionAnodization ProcessElectrical CharacterizationPlackett-Burman Design Of Experiments

Read Article

Cite this Article

Gomes, T. C., Kumar, D., Alves, N., Kettle, J., Fugikawa-Santos, L. The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors. J. Vis. Exp. (159), e60798, doi:10.3791/60798 (2020).

Download .ris file

Copy

Share Video

.

Copy