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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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Ingeniería

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JoVE Revista Ingeniería

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

7,245 Views

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14:16 min

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October 23, 2018

DOI:

10.3791/58113-v

DOI:

10.3791/58113-v

•

14:16 min

October 23, 2018

•

2 Views

Kai Ding, Vitaliy Avrutin, Natalia Izioumskaia, Md Barkat Ullah, Ümit Özgür, Hadis Morkoç

¹Department of Electrical and Computer Engineering,Virginia Commonwealth University

Tags

Schottky Diodes Zn-polar BeMgZnO/ZnO Heterostructure Plasma-assisted Molecular Beam Epitaxy Zinc Oxide Heterojunction Field Effect Transistors Two-dimensional Electron Gas High-frequency High-power Field Effect Transistors Electron Saturation Schottky Contact Stability Solar Plant Detectors Chemical Sensors Biosensors Sapphire Substrate Metal Organic CVD Aluminum Nitride Gallium Nitride

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