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Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
 

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Article DOI: 10.3791/57023-v • 11:21 min • March 21st, 2018
March 21st, 2018 •
1,2, 2,3, 1, 2,4
1SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, 2Department of Physics, National University of Singapore, 3NUS Graduate School for Integrative Sciences and Engineering, Centre for Life Sciences, 4Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore

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Resumen
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A protocol is presented demonstrating a two-step fabrication technique to grow large-sized single-layer rectangular shaped SnSe flakes on low-cost SiO2/Si dielectrics wafers in an atmospheric pressure quartz tube furnace system.

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Atmospheric Pressure Fabrication Large-sized Single-layer Rectangular SnSe Flakes Vapor Transport Deposition Technique Nitrogen Etching Method Dielectric Substrates Two-dimensional Materials Tin Sulfide Germanium Selenide Indium Telleride Silicon Dioxide Silicon Dielectrics Self-limiting Nitrogen Etching Method Tungsten Diselenide Tin Selenide Horizontal Tube Furnace Target Temperature
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