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利用同步辐射微断层调查的多尺度三维微电子封装
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Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages
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利用同步辐射微断层调查的多尺度三维微电子封装

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08:46 min

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April 13, 2016

DOI:

10.3791/53683-v

DOI:
10.3791/53683-v

•

08:46 min
April 13, 2016

•

2 Views
, , , , , ,
1Materials Engineering Division,Lawrence Livermore National Laboratory, 2Assembly Test and Technology Development Failure Analysis Labs,Intel Corporation, 3Advanced Light Source,Lawrence Berkeley National Laboratory

Summary

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在这项研究中同步加速器辐射微断层摄影术中，非破坏性的三维成像技术中，用于研究整个微电子封装为16×16毫米的截面积。由于同步的高通量和亮度样品成像，在短短3分钟，8.7微米的空间分辨率。

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Cite this Article

Carlton, H. D., Elmer, J. W., Li, Y., Pacheco, M., Goyal, D., Parkinson, D. Y., MacDowell, A. A. Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages. J. Vis. Exp. (110), e53683, doi:10.3791/53683 (2016).

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