Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Julia I. Deitz; Santino D. Carnevale; Steven A. Ringel; David W. McComb; Tyler J. Grassman

doi:10.3791/52745

Journal

/

Ingeniería

/

迅速なIII-Vヘテロ特徴付けのための電子チャネリングコントラストイメージング

JoVE Revista
Ingeniería

Se requiere una suscripción a JoVE para ver este contenido. Inicie sesión o comience su prueba gratuita.

JoVE Revista Ingeniería

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Please note that all translations are automatically generated. Click here for the English version.

迅速なIII-Vヘテロ特徴付けのための電子チャネリングコントラストイメージング

10,794 Views

•

07:50 min

•

July 17, 2015

DOI:

10.3791/52745-v

DOI:

10.3791/52745-v

•

07:50 min

July 17, 2015

•

9 Views

Julia I. Deitz¹, Santino D. Carnevale², Steven A. Ringel³, David W. McComb³, Tyler J. Grassman^1,2

¹Department of Materials Science and Engineering,The Ohio State University, ²Department of Electrical and Computer Engineering,The Ohio State University, ³Institute of Materials Research,The Ohio State University

Summary

The use of electron channeling contrast imaging in a scanning electron microscope to characterize defects in III-V/Si heteroexpitaxial thin films is described. This method yields similar results to plan-view transmission electron microscopy, but in significantly less time due to lack of required sample preparation.

Explore More Videos

Electron Channeling Contrast Imaging ECCI Scanning Electron Microscope SEM III-V Heteroepitaxial Misfit Dislocations GaP Si(001)Plan-view Transmission Electron Microscopy PV-TEM Defect Characterization Critical Thickness Threading Dislocations Stacking Fault

Read Article

迅速なIII-Vヘテロ特徴付けのための電子チャネリングコントラストイメージング

Summary

Automatically generated

Explore More Videos