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硅表面润湿性的选择区域改性脉冲紫外激光照射在液体环境
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Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
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硅表面润湿性的选择区域改性脉冲紫外激光照射在液体环境

8,118 Views

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08:48 min

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November 09, 2015

DOI:

10.3791/52720-v

DOI:
10.3791/52720-v

•

08:48 min
November 09, 2015

•

1 Views
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1Laboratory for Quantum Semiconductors and Photon-based BioNanotechnology, Interdisciplinary Institute for Technological Innovation, Laboratoire Nanotechnologies Nanosystèmes (LN2)- CNRS UMI-3463, Faculty of Engineering,Université de Sherbrooke

Summary

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我们对在HF原位改变处理的Si（001）面成亲水或疏水状态通过照射在微流体室中填充用H 2 O 2 / H 2 O的溶液（0.01％-0.5％）或甲醇溶液样品的处理报告使用相对低的脉冲能量密度的脉冲UV激光。

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Liu, N., Moumanis, K., Dubowski, J. J. Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment. J. Vis. Exp. (105), e52720, doi:10.3791/52720 (2015).

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