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في انهيار العزل الكهربائي الموضعي الوقت المعتمد في نقل الكترون المجهر: إمكانية لفهم آلية الفشل في الأجهزة الإلكترونية الدقيقة
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Capítulos
- 00:05Título
- 01:35Sample Preparation
- 02:30Focused Ion Beam Thinning in a Scanning Electron Microscope
- 03:53Sample Transfer to the Transmission Electron Microscope
- 04:29Establishing the Electrical Connection
- 05:19In Situ Time-dependent Dielectric Breakdown Experiment
- 06:50Computed Tomography
- 07:22Results: Failure Mechanism in Microelectronic Devices
- 08:34Conclusion
The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. This paper demonstrates the procedure of an in situ TDDB experiment in the transmission electron microscope, which opens a possibility to study the failure mechanism in microelectronic products.
