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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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June 26, 2015
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Liao, Z., Gall, M., Yeap, K. B., Sander, C., Clausner, A., Mühle, U., Gluch, J., Standke, Y., Aubel, O., Beyer, A., Hauschildt, M., Zschech, E. In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices. J. Vis. Exp. (100), e52447, doi:10.3791/52447 (2015).
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