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Graphène-Assisté Quasi-van der Waals Epitaxy of AlN Film sur substrat saphir nano-modelé pour les diodes électroluminescentes ultraviolettes
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1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors,Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering,Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics,Peking University
Kapitel
- 00:04Introduction
- 00:40Atmospheric-Pressure Chemical Vapor Deposition (APCVD) Growth of Graphene on Nano-Patterned SapphireSubstrate (NPSS) and Nitrogen (N2)-Plasma Treatment
- 02:03Metal-Organic Chemical Vapor Deposition (MOCVD) Growth of Aluminum Nitrogen (AlN) on Graphene-NPSS and of Aluminum-Gallium-Nitrogen (AlGaN) Multiple Quantum Wells (MQW)
- 03:08AlGaN-Based Deep Ultraviolet Light-Emitting Diode (DUV-LED) Fabrication
- 06:02Results: Representative AIN Characterization
- 06:32Conclusion
