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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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JoVE Journal Ingenieurwesen
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

DOI:
10.3791/56494-v

•

08:50 min

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November 28, 2017

•

, , ,
1Graduate Institute of Electronics Engineering,National Taiwan University, 2Research Center for Applied Sciences,Academia Sinica, 3Graduate Institute of Photonics and Optoelectronics,National Taiwan University

Kapitel

  • 00:05Titel
  • 00:47WS2/MoS2Vertical Heterostructure Growth
  • 03:49Transition Metal Dichalcogenide (TMD) Thin Film Transfer
  • 06:21Results: Growth Mechanisms and Transistor Performance
  • 08:11Conclusion

Summary

Automatische Übersetzung

Automatische Übersetzung

Through the sulfurization of pre-deposited transition metals, large-area and vertical 2D crystal hetero-structures can be fabricated. The film transferring and device fabrication procedures are also demonstrated in this report.

Tags

Keywords: 2D Crystal HeterostructuresVertical 2D MaterialsSulfurizationTransition Metal FilmsDevice FabricationRF SputteringSapphire SubstrateMolybdenum TargetSulfur PowderTube FurnaceArgon GasMolybdenum DisulfideTungsten Target

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