/
/
Synthèse et caractérisation de l'axe c Haute ZnO Thin Film par Plasma Enhanced Chemical Vapor Deposition système et son application Photodetector UV
Zum Anzeigen dieser Inhalte ist ein JoVE-Abonnement erforderlich. Melden Sie sich an oder starten Sie Ihre kostenlose Testversion.
Kapitel
- 00:05Titel
- 02:07Substrate Preparation and Cleaning
- 02:37PECVD Chamber Preparation and Synthesis of ZnO Thin Films
- 05:10RTA Process
- 05:58Results: Synthesis and Characterization of ZnO Thin Films
- 07:30Conclusion
We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.
