/
/
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Zum Anzeigen dieser Inhalte ist ein JoVE-Abonnement erforderlich. Melden Sie sich an oder starten Sie Ihre kostenlose Testversion.
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
15,164 Views
•
11:42 min
•
July 24, 2015
DOI:
1Department of Physics,University of California at Berkeley, 2Department of Chemistry,University of California at Berkeley, 3Department of Chemical and Biomolecular Engineering,University of California at Berkeley, 4National Institute for Materials Science (Japan), 5Materials Sciences Division,Lawrence Berkeley National Laboratory, 6Kavli Energy NanoSciences Institute,University of California at Berkeley and Lawrence Berkeley National Laboratory
Read Article
Cite this Article
Jung, H. S., Tsai, H., Wong, D., Germany, C., Kahn, S., Kim, Y., Aikawa, A. S., Desai, D. K., Rodgers, G. F., Bradley, A. J., Velasco Jr., J., Watanabe, K., Taniguchi, T., Wang, F., Zettl, A., Crommie, M. F. Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities. J. Vis. Exp. (101), e52711, doi:10.3791/52711 (2015).
Copy