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Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
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工程学
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JoVE 杂志 工程学
Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

DOI:
10.3791/59066-v

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09:33 min

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June 07, 2019

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, ,
1Department of Mechanical Engineering,Pohang University of Science and Technology (POSTECH), 2Department of Chemical Engineering,Pohang University of Science and Technology (POSTECH), 3National Institute of Nanomaterials Technology (NINT)

Chapters

  • 00:04Title
  • 00:52Deposition of Hydrogenated Amorphous Silicon (a-Si:H) on a Fused Silica Substrate by Plasma-enhanced Chemical Vapor Deposition (PECVD)
  • 01:35Formation of the Chromium Etching Mask
  • 06:53Etching Process of Hydrogenated Amorphous Silicon
  • 07:41Results: The Fabricated Metasurface and its Polarization-independent
  • 08:31Conclusion

Summary

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A protocol for the fabrication and optical characterization of dielectric metasurfaces is presented. This method can be applied to the fabrication of not only beam splitters, but also of general dielectric metasurfaces, such as lenses, holograms, and optical cloaks.

Tags

Metasurface FabricationDielectric MetasurfaceEqual-intensity Beam GenerationPECVDPMMAElectron Beam LithographySilicon Photonics

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