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U2O5 Film Vorbereitung über UO2 Ablagerung von Gleichstrom-Sputtern und aufeinanderfolgenden Oxidation und Reduktion mit atomarem Sauerstoff und atomarer Wasserstoff
JoVE 杂志
化学
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JoVE 杂志 化学
U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen
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U2O5 Film Vorbereitung über UO2 Ablagerung von Gleichstrom-Sputtern und aufeinanderfolgenden Oxidation und Reduktion mit atomarem Sauerstoff und atomarer Wasserstoff

7,649 Views

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12:05 min

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February 21, 2019

DOI:

10.3791/59017-v

DOI:
10.3791/59017-v

•

12:05 min
February 21, 2019

•

3 Views
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1European Commission, Joint Research Centre,Directorate for Nuclear Safety and Security

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U2O5UO2Thin FilmSputteringOxidationReductionAtomic OxygenAtomic HydrogenUranium OxidesSurface CompositionX-ray Photoelectron SpectroscopyNitridesCarbidesUltra-high VacuumSample PreparationGold SubstrateLoading ChamberVacuum System

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Gouder, T., Huber, F., Eloirdi, R., Caciuffo, R. U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen. J. Vis. Exp. (144), e59017, doi:10.3791/59017 (2019).

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