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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
JoVE 杂志
工程学
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JoVE 杂志 工程学
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

DOI:
10.3791/57885-v

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07:12 min

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August 28, 2018

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, , ,
1Department of Physics,National Taiwan Normal University, 2National Applied Research Laboratories (NARL),National Nano Device Laboratories (NDL)

Chapters

  • 00:04Title
  • 00:49Fabrication of 2D Back-Gated Transistors
  • 04:41Results: Characterization of the MoS2 Monolayer Device
  • 05:49Conclusion

Summary

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The article aims to introduce a standard and reliable fabrication procedure for the development of future low dimensional nanoelectronics.

Tags

2D NanoelectronicsFabrication2D MaterialsMolybdenum DisulfidePMMAElectron-beam LithographySubstrate PreparationDevice Fabrication

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