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Theoretische berekening en experimentele verificatie voor dislocatiereductie in Germanium epitaxiale lagen met semicylindrische holtes op silicium
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JoVE Journal Engineering
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretische berekening en experimentele verificatie voor dislocatiereductie in Germanium epitaxiale lagen met semicylindrische holtes op silicium

Nederlands

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1,999 Views

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06:57 min

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July 17, 2020

DOI:

10.3791/58897-v

DOI:
10.3791/58897-v

•

06:57 min
July 17, 2020

•

3 Views
, , ,
1Department of Materials Engineering,The University of Tokyo, 2Department of Electrical and Electronic Information Engineering,Toyohashi University of Technology, 3Department of Materials Science and Engineering,Massachusetts Institute of Technology

Summary

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Theoretische berekening en experimentele verificatie worden voorgesteld voor een vermindering van de threading dislocatie (TD) dichtheid in germanium epitaxiale lagen met semicylindrische holtes op silicium. Berekeningen op basis van de interactie van TD's en oppervlak via beeldkracht, TD-metingen en transmissie-elektronenmicroscoopwaarnemingen van TD's worden gepresenteerd.

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Cite this Article

Yako, M., Ishikawa, Y., Abe, E., Wada, K. Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon. J. Vis. Exp. (161), e58897, doi:10.3791/58897 (2020).

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